RADIATION-STIMULATED GROWTH OF THE ELECTRON MOBILITY IN SILICON SINGLE CRYSTALS

Abstract

Based on the measurements of infrared Fourier spectroscopy and the Hall effect, it was established that the main
radiation defects that affect on the electrical properties of n-Si single crystals irradiated by the different electron flows with the
energy of 12 MeV are VOi
, CiOi
, and VOiP complexes. The magnitude of the Hall mobility of electrons will be determined by
the phonon scattering mechanisms, electron scattering on the phosphorus impurity ions, charged radiation defects and
fluctuation potential. It was established that the irradiation of n-Si by the electron flow of Ф=5·1016 el./cm2
leads to an
abnormal increase in Hall mobility.