FEATURES OF KINETIC EFFECTS IN SEMICONDUCTOR SINGLE CRYTALS WITH HETEROGENEOUS DISTRIBUTION OF IMPURITIES
Keywords:
layered periodic inhomogeneities, cadmium antimonide, illumination, mobility, switching effect, Hall effect
Abstract
The influence of inhomogeneities in the distribution of tellurium alloying impurity on kinetic effects in single
crystals of cadmium antimonide was investigated. It was noted that the presence of layered periodic inhomogeneities along the
growth axis of the crystal leads to the formation of internal electric fields between the growth layers. It was found that upon
illumination in samples cut parallel to the axis of crystal growth, the values of mobility and average transport length of the
free path of charge carriers significantly increase.
