THE FERMI LEVEL IN CADMIUM ANTIMONIDE CRYSTALS IN THE PRESENCE OF RADIATION DEFECTS

Abstract

According to the experimental results of the temperature dependences of the current carrier concentration, changes in the position of the Fermi level in specially undoped cadmium antimonide crystals before and after irradiation with ⁶⁰Co gamma quanta were calculated. Peculiarities of Fermi level position from temperature and gamma radiation dose in the region of impurity conductivity are considered. The study is based on the results of experimental data of Hall measurements and electrical conductivity. An analysis of the solutions of the electroneutrality equation was performed to correctly estimate and calculate the temperature dependence of the Fermi level.