DIRECT AND INDIRECT TRANSITIONS IN CRYSTALLINE COMPOUND ТlInX2–SnX2 (X – S, Se)
Keywords:
crystal, mole fraction, direct and indirect transition, energy gap, absorption coefficient, photosensitivity
Abstract
The paper presents the results of optical and photoelectric measurements and their analysis for crystalline compounds ТlInX2–SnX2 (X – S, Se) in the wavelength range 0.4÷1.1 μm at a temperature T = 300 K. The work aims to investigate the influence of mole fraction SnS2, SnSe2 on the mechanisms of interband transitions and the basic photon parameters of crystals of Tl1-xIn1-xSnx(S,Se)2 solid solutions. It was found that the change in the physical properties of the mole fraction of the components x associated with the rearrangement of the band structure significantly expands the functionality of the Tl1-xIn1-xSnxS2 (x = 0÷0,5) and Tl1-xIn1-xSnxSe2 (x = 0÷0,25) crystalline compounds as promising materials for optoelectronic devices.
