KINETICS OF ANNEALING OF RADIATION DEFECTS IN ELECTRON-IRRADIATED n-Ge
Keywords:
germanium single crystals, electron irradiation, isothermal annealing, annealing kinetics, annealing activation energy
Abstract
The kinetic equations for describing the isothermal annealing of germanium single crystals, doped by the antimony
impurity with the concentration of Nd=5·1014 cm-3, irradiated by the electrons with the energy of 10 MeV and a flow of
Ω=5·1015 el/cm2, were obtained. The annealing activation energy for complexes and disordered regions based on the
experimental results of the temperature dependence of the Hall coefficient and the calculated concentration values of the
VOіI2Ge complexes, created during irradiation and annealing in germanium single crystals, was determined. The results show
that the cores of the disordered regions are less thermally stable than the VOіI2Ge complexes.
