TEMPERATURE DEPENDENCIES OF FERMI LEVEL IN SYNGLE CRYSTALS OF CADMIUM ANTIMONIDE WITH DEEP ENERGY LEVELS

Abstract

The article calculates and analyzes the dependence of Fermi level for temperature 77 – 300 К in CdSb single crystals
with deep energy levels Ес – 0.12 еV, Ес – 0.16 еV and Ес – 0.3 еV which are brought about, correspondingly: in the first case –
by doping with tellurium, in the second case – by γ-irradiation a dose Ф ~·1018 γ-quant/сm2 of doped with tellurium crystals by
and in the third case – by γ-irradiation a dose Ф ~ 4·1018 γ-quant/сm2 of doped with indium crystals by. It is shown at temperature
rise Fermi level decreases in the direction from the conduction band to the middle of forbidden band on account of the fad that
charge carriers concentration increases in conduction band and decreases on the deep levels, i.e., they become exhausted.