PECULIARITIES OF THE TENSORESISTANCE OF N-GE SINGLE CRYSTALS AT THE STRONG UNIAXIAL PRESSURES

Abstract

The tensoresistive effect in n-Ge single crystals was studied at room temperature and liquid nitrogen temperature under the uniaxial pressure along the crystallographic directions [100], [110], and [111]. The increasing tensoresistance of the investigated n-Ge single crystals is explained by the decrease in electron mobility under the uniaxial pressure, which becomes a tensor when deformed along the [110] and [111] crystallographic directions. A significant increasing tensoresistance at the uniaxial pressures P//[100] is associated with (L₁-Δ₁) - inversion of the absolute minimum type in germanium. The obtained dependences tensoresistance of n-Ge  can be used in the design of pressure sensors with a wide range of tensosensitivity.