RADIATION STABILITY OF ELECTRON-IRRADIATED n-Ge SINGLE CRYSTALS

Abstract

The dependences of the resistivity on the electron irradiation flow with the energy of 10 MeV for germanium single crystals, doped by the antimony at different temperatures were investigated. All the obtained dependences are characterized by the presence of a maximum, which is associated with the maximum degree of compensation of the irradiated n-Ge single crystals and the most effective scattering of electrons on the created radiation defects for a certain irradiation flow. It was established that the resistivity of n-Ge decreases due to the ionization of deep levels of radiation defects and an increase in the mobility of current carriers with increasing temperature. A Significant decrease in the resistivity of germanium is observed when passing through the maximum for the flows of Ф≥2·10¹⁶ el./cm², which is explained by an increase in the concentration of current carriers due to the n-p-conversion of the conductivity type of germanium. The highest radiation resistance to electron irradiation is possessed by n-Ge single crystals, irradiated by multiple smaller electron flows than Ф=5·10¹⁵ el./cm²or flows of Ф>2·10¹⁶ el./cm². The obtained results are important in the design and operation of electronic devices and sensors made on the basis of germanium that operate in fields of increased radiation.