MECHANISM OF PHOTOLUMINESCENCE IN (Ga54.59In44.66Er0.75)2S300 SINGLE CRYSTAL

Abstract

Using solution-melt method (Ga_54.59In_44.66Er_0.75)₂S₃₀₀ single crystal was grown. The single crystal specimens were irradiated of the γ-radiation with the doses of 420, 1260, 2520, 5040 Gr with the help of a ⁶⁰Co source. An intense luminescent radiation was recorded in the range of 1.48 - 1.61 and 0.75 - 0.86 eV under laser excitation with 532 nm wavelength. A diagram of energy levels for erbium ion was constructed and the mechanism of radiation was established, in which the cross-relaxation process plays an important role. At high doses of irradiation (2520, 5040 Gr) the intensity of the luminescent radiation increases, that we associate with increase in the concentration of γ-induced defects in the crystal.