SOME ASPECTS OF THE THEORY OF DEFECT ANNEALING IN IRRADIATED CdSb CRYSTALS

Abstract

The processes of formation and rearrangement of radiation defects during irradiation and annealing can be considered as a set of quasichemical reactions of different orders. Some of them are difficult to reduce to a form that would allow analyzing the time dependence of the defect concentration during annealing.
An important parameter that determines the kinetics of defect annealing is the annealing activation energy. There are many methods for determining this energy. We used the cross-section method, which is based on the analysis of Arrhenius curves at different annealing temperatures. To determine the thermal stability region of radiation defects, the isochronal annealing method was used.