FERMI LEVEL IN n-CdSb CRYSTALS WITH DEFECT DEEP ENERGY LEVELS

Abstract

Changes in the position of the Fermi level in n-CdSb crystals doped with Te and In impurities before and after irradiation with ⁶⁰Co γ-quanta are studied based on the results of the temperature dependences of the current carrier concentration. The features of the position of the Fermi level as a function of temperature in the region of impurity and intrinsic conductivity are considered. The study is based on the results of experimental data from Hall measurements and electrical conductivity. To correctly estimate the temperature dependence of the Fermi level, we analyzed the limiting solutions of the electroneutrality equation and took into account the temperature changes in the bandgap and the level of defects.